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Regenerative Electroless Etching of Silicon

Kurt W. Kolasinski, Nathan J. Gimbar, Haibo Yu, Mark Aindow, Ermei Mäkilä, and Jarno Salonen
Research summary:

Abstract: Regenerative electroless etching (ReEtching),  described herein for the first time, is a method of producing nanostructured  semiconductors in which an oxidant (Ox1) is used as a catalytic agent to  facilitate the reaction between a semiconductor and a second oxidant (Ox2)  that would be unreactive in the primary reaction. Ox2 is used to regenerate  Ox1, which is capable of initiating etching by injecting holes into the  semiconductor valence band. Therefore, the extent of reaction is controlled  by the amount of Ox2 added, and the rate of reaction is controlled by the  injection rate of Ox2. This general strategy is demonstrated specifically for  the production of highly luminescent, nanocrystalline porous Si from the  reaction of V2O5 in HF(aq) as Ox1 andH2O2(aq) as Ox2 with Si powder and  wafers.

Angew. Chem. Int. Ed. 2017, 56, 624 –627
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